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【18051880MHZ】【MACOM】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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0, 5/2016. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 87 W AVG., 31.5 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H455W23NR6. 1805 1880 MHz , 56 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR . A2T18S260W12NR3. OM--880X--2L2L. PLASTIC. Figure 1. Pin Connections. Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding. 0, 5/2015. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 71 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H410--24SR6. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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1805-1880MHZ

1805-1880MHZ  MACOM 2015+SMD 183China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

1805-1880MHZ

1805-1880MHZ  11+ 183Hong Kong
C&Z Electronic Hongkong Co., Limited E-Catalog 6th Year Member

1805-1880MHZ

1805-1880MHZ  MACOM 11+SMD 183Hong Kong
Hongkong Rixin International Trading Company E-Catalog 1st Year Member

1805-1880MHz 20??20 ????

1805-1880MHz 20??20 ????  277China
Real Chips Electronics International LTD E-Catalog 1st Year Member

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0, 5/2016. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 87 W AVG., 31.5 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H455W23NR6. 1805 1880 MHz , 56 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR . A2T18S260W12NR3. OM--880X--2L2L. PLASTIC. Figure 1. Pin Connections. Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding. 0, 5/2015. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 71 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H410--24SR6. HKinDataSheet_ZO1GOSIT
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