18051880MHZ Description0, 5/2016. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 87 W AVG., 31.5 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H455W23NR6. 1805 1880 MHz , 56 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR . A2T18S260W12NR3. OM--880X--2L2L. PLASTIC. Figure 1. Pin Connections. Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding. 0, 5/2015. Freescale Semiconductor. Technical Data. 1805 1880 MHz , 71 W AVG., 28 V. AIRFAST RF POWER LDMOS. TRANSISTOR. A2T18H410--24SR6.
| ||Part Number||Brand||D/C||Qty||Company|
|MACOM||2015+||183||Bonase Electronics (HK) Co., Limited || || ||12|
1805-1880MHz 20??20 ????
|277||Real Chips Electronics International LTD || ||1|
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