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【256X8DDR3】【K9F1G08U0AYCB0】【338M】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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HK Meihang Technology Co., Limited, HONGKONG XINWO TECHNOLOGY ELECTRONICS CO., LIMITED ...
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Part NumberPart Number BrandD/CQtyCountry /
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Company

256X8DDR3

256X8DDR3 5000China
HK Meihang Technology Co., Limited  11

K9F1G08U0A-YCB0

K9F1G08U0A-YCB0 SAMSUNG14+12000China
HONGKONG XINWO TECHNOLOGY ELECTRONICS CO., LIMITED1

K9F1G08U0A-YCB0

K9F1G08U0A-YCB0 SAMSUNG08+7680Hong Kong
SSF Group (Asia) Limited  10

K9F1G08U0AYCB0

K9F1G08U0AYCB0 Samsung10000USA
Val Technologies, Inc 14

K9F1G08U0A-YCB0

K9F1G08U0A-YCB0 SAMSUNG05+500China
L C Great Exploit Limited 10

K9F1G08U0A-YCB0

K9F1G08U0A-YCB0 SAMSUNG4213China
Nosin (HK) Electronics Co.  12

338M

338M TFK16+83000Taiwan
Yingxinyuan INT'L (Group) Limited  14

Buy: 256X8DDR3, K9F1G08U0AYCB0, 338M
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K9F1G08U0AYCB0 | 338M | 256S12A | 256SG12 | 256UBX6 | 25700071 | 25700IG1P1030A | 25701030CMZR1535P2N | 2570134 | 257032 | 2570512
 [hkinbatch20170420] [HGCacheDateZOITOTZO] [HGReferer_SD_Overview] [HKINPDSTYLE]
256X8DDR3 DATASHEET, K9F1G08U0AYCB0 1G. Samsung. K9K1G08U0M-YCB0. 512. 1G. Samsung. K9F1G08U0A-YCB0 . 2K. 1G. Samsung. K9K4G08U0M-YCB0. 2K. 4G. Samsung. K9W8G08U1M- YCB0., 338M h td #402;I Hge # 338;m j UL l v lHw hJ Hglu hV Hg D V w i jL H ahVM i td P HglVH v. ju K Ugn Hg hV . lVH um HglHw hJ Page 1. PART NUMBER DATA SHEET. ECLIPTEK. CORPORATION. R. REGULATORY COMPLIANCE (Data Sheet downloaded on Jan 17, 2017). 2011/ 65 ERA 338M (+). 2400 pF. 2400 pF. 0.1 uF. 191 Ohms, O.75W. 2.21 Ohms, 0.25W. Mini Circuifs TCCH 80+. COMPONENT. A1. 01 (NOTE 4). 02 (NOTE 4). Page 1. TSOP21.., TSOP23.., TSOP41.., TSOP43.., TSOP25.., TSOP45.. www. vishay.com. Vishay Semiconductors. Rev. 1.4, 22-Jul-16. 1. Document Number: 2015 revenue CHF 338m ; 2016 H1 revenue CHF 180m. 2009-2015 compound annual growth 28%. More than 800 employees worldwide (end of June 2016).

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