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【2DB1386R13 Transistors - Bipolar (BJT) - Single DIODES】【ISPLSI1016E80LTNI】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2DB1386R13

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Diodes Incorporated

Description:

TRANS PNP 20V 5A SOT89-3

Series:

-

Packaging:

Tape & Reel (TR)

Transistor Type:

PNP

Current - Collector (Ic) (Max):

5A

Voltage - Collector Emitter Breakdown (Max):

20V

Vce Saturation (Max) @ Ib, Ic:

1V @ 100mA, 4A

Current - Collector Cutoff (Max):

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

180 @ 500mA, 2V

Power - Max:

1W

Frequency - Transition:

100MHz

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-243AA

Supplier Device Package:

SOT-89-3

Search For 2DB1386R13 - 2DB1386R13 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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2DB1386R-13

2DB1386R-13 DIODES20000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3

2DB1386R-13

2DB1386R-13 DIODES1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED  2

2DB1386R-13

2DB1386R-13 DIODES1315+3666China
Hongkong Intercell Electronics Co.,Limited  7

2DB1386R-13

2DB1386R-13 DIODES2015+5000China
Bonase Electronics (HK) Co., Limited  12

2DB1386R-13

2DB1386R-13 200000Taiwan
E-Power Market Co.,Ltd 9

ISPLSI1016E-80LTNI

ISPLSI1016E-80LTNI LATTICE13+24000China
Legend Electronic Co., Limited  3

ISPLSI1016E-80LTNI

ISPLSI1016E-80LTNI LATTICE1016+24000China
Royal Chip Technology Co., Limited 2

ISPLSI1016110LJ

ISPLSI1016110LJ lat1998110China
ICK Internation (HK) Co., Limited 6

ispLsi1016-100LJ

ispLsi1016-100LJ LATTICE33China
Kunlida Electronics (HK) Limited  5

ISPLSI1016-60LH

ISPLSI1016-60LH 15+5000China
XINHUA WEIYE (INT'L) CO., LIMITED  2

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