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【2N5427 Transistors - Bipolar (BJT) - Single isc, iscsemi】【1MBI600PX14】【CIL10S270MNC】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2N5427

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Microsemi Corporation

Description:

TRANS PNP 80V 7A TO-66

Series:

-

Packaging:

Bulk

Transistor Type:

PNP

Current - Collector (Ic) (Max):

7A

Voltage - Collector Emitter Breakdown (Max):

80V

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 7A, 80V

Power - Max:

40W

Frequency - Transition:

-

Operating Temperature:

-

Mounting Type:

Through Hole

Package / Case:

TO-213AA, TO-66-2

Supplier Device Package:

TO-66

Search For 2N5427 - 2N5427 Product Information : 

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1 - 13 of 13 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

2N5427

2N5427 isc, iscsemi2018+4000China
Inchange Semiconductor Company Limited 2

2N5427

2N5427 Microsemi Corporation2016+8000China
MY Group (Asia) Limited  13

2N5427

2N5427 17+28000China
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED1
STRC

1MBI600PX-14

1MBI600PX-14 FUJI120China
HY(HK) Ic Limited  8
Warranty

1MBI600PX-14

1MBI600PX-14 FUJI2010191Hong Kong
Digchip Technology Co.,Limited  3

1MBI600PX-14

1MBI600PX-14 FUJI120China
HK Asian TaiXin Technology Co.,LTD 1

1MBI600NN-060

1MBI600NN-060 FUJI14,15200China
BeiJing Jietuozijing Science and Technology Co., Ltd. 14

1MBI600LN-060

1MBI600LN-060 FUJI237China
Yaspro Electronics (Shanghai) Co., Ltd  2

CIL10S270MNC

CIL10S270MNC SAMSUNG2016+695000China
HK KTS Electronics Co.,Limited 9

CIL10S270MNC

CIL10S270MNC SAMSUNG08+75840Hong Kong
Bossion International  10

CIL10S270MNC

CIL10S270MNC SAMSUNG201758600China
Shenzhenshi Rongxin Micro-Technology Co.,LTD 1

CIL10S270MNC

CIL10S270MNC SAMSUNG393900China
Union Intelligence Technology Co., Limited1

CIL10S150MNC

CIL10S150MNC SAMSUNG8000China
Yisoning Technology Limited2

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