【2N5912 Transistors - Bipolar (BJT) - Arrays MOT】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

2N5912

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays

Brand:

Central Semiconductor Corp

Description:

TRANSISTOR DUAL TO78

Series:

-

Packaging:

Bulk

Transistor Type:

-

Current - Collector (Ic) (Max):

-

Voltage - Collector Emitter Breakdown (Max):

-

Vce Saturation (Max) @ Ib, Ic:

-

Current - Collector Cutoff (Max):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

-

Power - Max:

-

Frequency - Transition:

-

Operating Temperature:

-

Mounting Type:

Through Hole

Package / Case:

TO-78-6 Metal Can

Supplier Device Package:

TO-78-6

2N5912 Description

Dual N-Channel JFET. High Frequency Amplifier. 2N5911 / 2N5912 . FEATURES. Tight Tracking. Low Insertion Loss. Good Matching. ABSOLUTE MAXIMUM DESIGNER SUPPORT/SERVICES. Centrals applications engineering team is ready to discuss your design challenges. Just ask. Free quick ship samples ( 2nd MAXIMUM RATINGS: (TA=25 C unless otherwise noted). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 100. V. Collector-Emitter Voltage. VCER. 80. V. MAXIMUM RATINGS: (TA=25 C). SYMBOL. UNITS. Collector-Base Voltage. VCBO. 60. V. Collector-Emitter Voltage. VCEO. 60. V. Emitter-Base Voltage. VEBO.
1 - 5 of 5 Record(s)
2N5912
 Part NumberBrandD/CQtyCompany

2N5912

MOT03+1000Digchip Technology Co.,Limited   4

2N5912

2000Novelty Electronics Limited   10

2N5912

MOT07+5000Nortion Technology (HK) Co.,Limited    8

2N5912

MOT1000HK Niuhuasi Technology Limited    8

2N5912

15+8654Agreat Technology (Hong Kong) Co., Limited    1

Related Part Number

2N6989 | 2SA1618-Y | 2N5796 | 2N6989 | 2SA1618-Y | 2SA1873-GR(TE85LF | 2SA1873-Y | 2SC4207-Y | 2SC4944-Y | BA12004BF-E2 | BC817DPN,115
2N5912 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOIZO]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

2N5912 Related Keywords in 2019 USA

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