【2N6107 Transistors - Bipolar (BJT) - Single isc, iscsemi】【1N4002E3/73】【DF19G30S1C】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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The following offer records may have been changed. To search for latest offer, please click Get Latest Offer
Part Number:

2N6107

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Central Semiconductor Corp

Description:

TRANS PNP 70V 7A TO-220

Series:

-

Packaging:

Tube

Transistor Type:

PNP

Current - Collector (Ic) (Max):

7A

Voltage - Collector Emitter Breakdown (Max):

70V

Vce Saturation (Max) @ Ib, Ic:

3.5V @ 3A, 7A

Current - Collector Cutoff (Max):

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 2A, 4V

Power - Max:

40W

Frequency - Transition:

4MHz

Operating Temperature:

-65°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3

Supplier Device Package:

TO-220

2N6107 Description

2N6107 /D. 2N6107 , 2N6109, 2N6111 (PNP),. 2N6288, 2N6292 (NPN). Complementary Silicon. Plastic Power Transistors. These devices are designed for use CP611- 2N6107 . PNP - High Current Transistor Die. 6.0 Amp, 70 Volt. Die Size. 80 x 99 MILS. Die Thickness. 12.5 1.0 MILS. Base Bonding Pad Size. 12 x 32 Jan 1, 2013 2N6107 . PNP Silicon. Complementary. Power Transistor. Maximum Ratings*. Symbol. Rating. Rating. Unit. VCEO. Collector-Emitter Voltage. VCEO(sus) = 70 Vdc (Min) - 2N6107 , 2N6292. High Current Gain Bandwidth Product. fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92. fT = 10 MHz (Min) Apr 2, 2001 ON Semiconductor. SJE2927. D45H11. ON Semiconductor. SJE2953LFBU. 2N6107 . ON Semiconductor. SJE2957. TIP50. ON Semiconductor.
1 - 15 of 15 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany

2N6107

isc, iscsemi2017+43782Inchange Semiconductor Company Limited   2

2N6107, 1N4002E3/73, DF19G30S1C
 Part NumberBrandD/CQtyCompany

2N6107

MOT04+136Wide Key International Limited    14

2N6107

ON9501+66Hongkong Intercell Electronics Co.,Limited    7

2N6107

ChipMall13+25CHIPMALL ELECTRONICS LIMITED    3

2N6107

9501+50L C Great Exploit Limited   10

1N4002-E3/73
 

VISHAY3403Belt (HK) Electronics Co    11

1N4002-E3/73

VIS30CHIPMALL ELECTRONICS LIMITED    3

1N4002-E3/73

Vishay Semiconductor Diodes Division2016+1000MY Group (Asia) Limited    13

1N4002-E3/73

VISHAY INTERTECHNOLOGY45000Merefield's Electronics Ltd.   11

1N4002E3/73

VISHAY4984FantastIC Sourcing   13

DF19G-30S-1C

HRS24000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    15

DF19G-30S-1C(05)

HRS16+28500Parts Components Ltd   2

DF19G-30S-1F
 

Hirose10Top Electronics Co.,    12

DF19G-30P-1H(54)

HIROSE1Wintec Mfg. (Japan) Corporation  12

DF19G-30P-1H(56)

44503Hong Kong In Fortune Electronics Co., Limited    12

Related Part Number

1N4002E3/73 | DF19G30S1C | 2N60L/2A/600V/TO251 | 2N60LA | 2N60LATM3T | 2N60LB | 2N60LBTF3T | 2N60LBTM3T | 2N60S5 | 2N6101 | 2N6111
2N6107 Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIZZ]
[HGReferer_Escrow]
[HKIN20171020GESTYLE]
[HKIN20171020MDPartDetails]

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