Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
Central Semiconductor Corp
TRANS PNP 70V 7A TO-220
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 3A, 7A
Current - Collector Cutoff (Max):
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 2A, 4V
Power - Max:
Frequency - Transition:
-65Â°C ~ 150Â°C (TJ)
Package / Case:
Supplier Device Package:
Search For 2N6107 - 2N6107 Product Information :
2N6107 2N6107 /D. 2N6107 , 2N6109, 2N6111 (PNP),. 2N6288, 2N6292 (NPN). Complementary Silicon. Plastic Power Transistors. These devices are designed for use CP611- 2N6107 . PNP - High Current Transistor Die. 6.0 Amp, 70 Volt. Die Size. 80 x 99 MILS. Die Thickness. 12.5 1.0 MILS. Base Bonding Pad Size. 12 x 32 Jan 1, 2013 2N6107 . PNP Silicon. Complementary. Power Transistor. Maximum Ratings*. Symbol. Rating. Rating. Unit. VCEO. Collector-Emitter Voltage. VCEO(sus) = 70 Vdc (Min) - 2N6107 , 2N6292. High Current Gain Bandwidth Product. fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92. fT = 10 MHz (Min) Apr 2, 2001 ON Semiconductor. SJE2927. D45H11. ON Semiconductor. SJE2953LFBU. 2N6107 . ON Semiconductor. SJE2957. TIP50. ON Semiconductor., 1N4002E3/73 DIODE GEN PURP 100V 1A DO204AL Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55～C ~ 150～C ...
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