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【2N6491G Transistors - Bipolar (BJT) - Single ON】【RT1C3904T1241W】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2N6491G

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

ON Semiconductor

Description:

TRANS PNP 80V 15A TO220AB

Series:

-

Packaging:

Tube

Transistor Type:

PNP

Current - Collector (Ic) (Max):

15A

Voltage - Collector Emitter Breakdown (Max):

80V

Vce Saturation (Max) @ Ib, Ic:

3.5V @ 5A, 15A

Current - Collector Cutoff (Max):

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:

20 @ 5A, 4V

Power - Max:

1.8W

Frequency - Transition:

5MHz

Operating Temperature:

-65°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3

Supplier Device Package:

TO-220AB

Search For 2N6491G - 2N6491G Product Information : 

2N6491G 2N6491G, ON, TO220AB, Semiconductors, Integrated Circuits (ICs) ...
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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

2N6491G

2N6491G ON436China
Hongkong Intercell Electronics Co.,Limited  7

2N6491G

2N6491G ON Semiconductor2015+2China
Bonase Electronics (HK) Co., Limited  12

2N6491G

2N6491G 5USA
Chip 1 Exchange USA, Inc.  1

2N6491G

2N6491G ON Semiconductor2016+14000China
MY Group (Asia) Limited  13

2N6491G

2N6491G ON2015+664China
JIALONG INDUSTRY (HK) LIMITED 1

RT1C3904-T124-1W

RT1C3904-T124-1W ISAHAYA1686China
Yu Hong Technologies Limited 2

RT1C3904-T124-1W

RT1C3904-T124-1W ISAHAYA132000Taiwan
Longisland Tech Co., Ltd12

RT1C3904-T124-1W

RT1C3904-T124-1W MITSUBISHI2015+12000China
Bonase Electronics (HK) Co., Limited  12

RT1C3904-T124-1W

RT1C3904-T124-1W 06+1460Hong Kong
Hongkong Rixin International Trading Company  2

RT1C3904-T112-1W

RT1C3904-T112-1W ISAHAYA11+16300China
Riking Technology (HK) Co., Limited  8

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