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【2N6661 Transistors - FETs, MOSFETs - Single SSI】【1N4733】【ECS1432023ATR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2N6661

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Microchip Technology

Description:

MOSFET N-CH 90V 350MA 3TO-39

Series:

-

Packaging:

Bulk

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

90V

Current - Continuous Drain (Id) @ 25°C:

350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

50pF @ 24V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

6.25W (Tc)

Rds On (Max) @ Id, Vgs:

4 Ohm @ 1A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-39

Package / Case:

TO-205AD, TO-39-3 Metal Can

Search For 2N6661 - 2N6661 Product Information : 

2N6661 2N6661, SSI, Semiconductors, Integrated Circuits (ICs), 1N4733 Rev. 2.4. 02-Jun-14. 1. Document Number: 85816. For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. Sep 9, 2011 ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and Jul 25, 2002 IZT (mA). ( ). ( ). (mA). ( A). (V). IR (mA). IZM (mA). 1N4728. 3.3. 76. 10. 400. 1.0 . 100. 1. 1380. 276. 1N4729. 3.6. 69. 10. 400. 1.0. 100. 1. 1260. 252. 1N4730. 3.9 . 64. 9. 400. 1.0. 50. 1. 1190. 234. 1N4731. 4.3. 58. 9. 400. 1.0. 10. 1. 1070. 217. 1N4732. 4.7. 53. 8. 500. 1.0. 10. 1. 970. 193. 1N4733 . 5.1. 49. 7. Temperature. Coefficient. @ IZT. VZ @ IZT. IZT. ZZT @ IZT. ZZK @ IZK. IZK. IR. @ VR. IZS. (V). (mA). ( ). ( ). (mA). ( A). (V). (mA). %/ C. 1N4728A. 3.3. 76. 10. 400 . 1.0. 100. 1.0. 1380. -0.08 to -0.05. 1N4729A. 3.6. 69. 10. 400. 1.0. 100. 1.0. 1260 . -0.08 to -0.05. 1N4730A. 3.9. 64. 9.0. 400. 1.0. 50. 1.0. 1190. -0.07 to -0.02. Jan 1, 2011 IR @VR. VR. IR. IZM. Volts. mA. OHMS. OHMS. mA. uA. Volts. mA. mA. 1N4728. 3.3. 76. 10. 400. 1. 100. 1. 1380. 276. 1N4729. 3.6. 69. 10. 400. 1. 100. 1. 1260. 252. 1N4730. 3.9. 64. 9. 400. 1. 50. 1. 1190. 234. 1N4731. 4.3. 58. 9. 400. 1. 10. 1 . 1070. 217. 1N4732. 4.7. 53. 8. 500. 1. 10. 1. 970. 193. 1N4733 . ...
1 - 15 of 15 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company
WarrantyNewAndOriginal

2N6661

2N6661 SSI1624+6563China
Hongkong Intercell Electronics Co.,Limited  7
Warranty

2N6661

2N6661 12+/13+5500Hong Kong
A & C Int'l Electronics Co.  11

2N6661

2N6661 VISHAY2500China
HK Niuhuasi Technology Limited  8
WarrantyNewAndOriginal

2N6661

2N6661 VISHAY08+1000China
CHIPMALL ELECTRONICS LIMITED  3

2N6661

2N6661 VISHAY/SILICONIX1053China
Top Electronics Co.,  12
WarrantyNewAndOriginal

1N4733

1N4733 VISHAY13+20China
CHIPMALL ELECTRONICS LIMITED  3

1N4733 1W 5v1

1N4733 1W 5v1 ST200China
Top Electronics Co.,  12
Warranty

1N4733

1N4733 ST2010+20Hong Kong
HongKong JDG Electronic Co., Limited  1

1N4733

1N4733 ST2015+4560000China
Bonase Electronics (HK) Co., Limited  12
Warranty

1N4733

1N4733 12449USA
Chip 1 Exchange USA, Inc.  1

ECS-143-20-23A-TR

ECS-143-20-23A-TR ECS78000China
HK Hongkai Electronics Limited  12

ECS-143-20-7S-TR700

ECS-143-20-7S-TR700 ECS07+580China
H&T Electronics Co., Ltd 5
STRC

ECS-143-20-3X-TR

ECS-143-20-3X-TR ECS INC2016+20000China
Far East Electronics Technology Limited  12

ECS-143-20-7S-TR700

ECS-143-20-7S-TR700 ECS2012+580China
Bonase Electronics (HK) Co., Limited  12

ECS-143-20-3X-TR

ECS-143-20-3X-TR ECS Inc.2016+18500China
MY Group (Asia) Limited  13

Buy: 2N6661, 1N4733, ECS1432023ATR
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