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【2N7002DWH6327XTSA1】【INFINEON】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 60V 0.3A SOT363 Series: OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 300mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) @ Vds: 20pF @ 25V Power - Max: 500mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 HKinDataSheet_ZO1GOSIT
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Hot Offer 2N7002LT1G 702 ON 2N7002LT1G 702 ON 08+ 6000 0 China
Kunlida Electronics (HK) Limited E-Catalog 5th Year Member



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2N7002DWH6327XTSA1

2N7002DWH6327XTSA1  INFINEON 18000France
FantastIC Sourcing E-Catalog 13th Year Member

2N7002DWH6327XTSA1

2N7002DWH6327XTSA1  Infineon Techno... 2016+ 15000China
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2N7002DWH6327XTSA1

2N7002DWH6327XTSA1  INFINEON 6000Taiwan
Sunrich-Tech Corporation 6th Year Member

2N7002DWH6327XTSA1

2N7002DWH6327XTSA1  Infineon 3288USA
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MOSFET 2N-CH 60V 0.3A SOT363 Series: OptiMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 300mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) @ Vds: 20pF @ 25V Power - Max: 500mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 HKinDataSheet_ZO1GOSIT
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