【2SA1930QJ Transistors - Bipolar (BJT) - Single isc,iscsemi】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2SA1930QJ

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Toshiba Semiconductor and Storage

Description:

TRANS PNP 2A 180V TO220-3

Series:

-

Packaging:

Bulk

Transistor Type:

PNP

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

180V

Vce Saturation (Max) @ Ib, Ic:

1V @ 100mA, 1A

Current - Collector Cutoff (Max):

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 100mA, 5V

Power - Max:

2W

Frequency - Transition:

200MHz

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3 Full Pack

Supplier Device Package:

TO-220NIS

1 - 5 of 5 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany

2SA1930

isc,iscsemi2018+26000Inchange Semiconductor Company Limited   3

2SA1930QJ
 Part NumberBrandD/CQtyCompany

2SA1931(PP)

TOSHIBA20085000Pacific Corporation   17

2SA1930(Q,M)

TOSHIBA500FantastIC Sourcing   14

2SA1930

Toshiba17+3100Dopoint Hi-Tech Limited   14

2SA19302SC5171

TOSHIBA17+2000Anterwell Technology Ltd   14

Related Part Number

2SA1931QJ | 2SA1943N(S1,X,S) | 2SA1908 | 2SA1930 | 2SA1931QJ | 2SA1943N(S1,X,S) | 2SA1943-O | 2SA1943OTU | 2SA1943RTU | 2SA1952TLQ | 2SA1962-O
2SA1930QJ Ref.:
[hkinbatch20181020]
[HGCacheDateZOIBIZIE]
[HGReferer_TRC]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

2SA1930QJ Related Keywords in 2018 USA

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