【2SA1930QJ Transistors - Bipolar (BJT) - Single Toshiba Semiconductor and Storage】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2SA1930QJ

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

Toshiba Semiconductor and Storage

Description:

TRANS PNP 2A 180V TO220-3

Series:

-

Packaging:

Bulk

Transistor Type:

PNP

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

180V

Vce Saturation (Max) @ Ib, Ic:

1V @ 100mA, 1A

Current - Collector Cutoff (Max):

5µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 100mA, 5V

Power - Max:

2W

Frequency - Transition:

200MHz

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3 Full Pack

Supplier Device Package:

TO-220NIS

1 - 5 of 5 Record(s)
2SA1930QJ
 Part NumberBrandD/CQtyCompany

2SA1930,Q(J

Toshiba Semiconductor and Storage2016+8000MY Group (Asia) Limited    13

2SA1931(PP)

TOSHIBA20085500Pacific Corporation   17

2SA1930(Q,M)

TOSHIBA500FantastIC Sourcing   13

2SA1930(LBS2MATQ,M

Toshiba Semiconductor and Storage2016+8000MY Group (Asia) Limited    13

2SA1937

TOS2800Hongkong Rixin International Trading Company    2

Related Part Number

2SA1931QJ | 2SA1943N | 2SA18900RL | 2SA1890GRL | 2SA1900T100Q | 2SA1907 | 2SA1908 | 2SA1909 | 2SA1930 | 2SA1931QJ | 2SA1943N
2SA1930QJ Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTZI]
[HGReferer_TRC]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

2SA1930QJ Related Keywords in 2018 USA

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