【2SB1122S-TD-E Transistors - Bipolar (BJT) - Single SANYO】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

2SB1122S-TD-E

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

ON Semiconductor

Description:

TRANS PNP 50V 1A SOT89-3

Series:

-

Packaging:

Tape & Reel (TR)

Transistor Type:

PNP

Current - Collector (Ic) (Max):

1A

Voltage - Collector Emitter Breakdown (Max):

50V

Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 100mA, 2V

Power - Max:

500mW

Frequency - Transition:

150MHz

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-243AA

Supplier Device Package:

PCP

1 - 5 of 5 Record(s)
2SB1122STDE
 Part NumberBrandD/CQtyCompany

2SB1122S-TD-E

SANYO2015+1000Bonase Electronics (HK) Co., Limited    12

2SB1122S-TD-E

ON Semiconductor15000MY Group (Asia) Limited    13

2SB1122S-TD-E

SANYO2011+136Hk Guoyuan Electronics Technology Limited    9

2SB1122S-TD-E

ON SEMI1155FantastIC Sourcing   13

2SB1122S-TD-E

ON1000E-Power Market Co.,Ltd   10

Related Part Number

2SB1123S-TD-E | 2SB1123T-TD-E | 2SB10540P | 2SB10630P | 2SB1121S-TD-E | 2SB1121T-TD-E | 2SB1123S-TD-E | 2SB1123T-TD-E | 2SB1124S-TD-E | 2SB1124T-TD-E | 2SB1132T100Q
2SB1122S-TD-E Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBOBZO]
[HGReferer_SiteMap]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

2SB1122S-TD-E Related Keywords in 2018 USA

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