Search For 500R07S3R3BV4T - 500R07S3R3BV4T Product Information :
500R07S3R3BV4T CAP CER 3.3PF 50V NP0 0402 Series: S Amplifier Type: RF, Microwave, High Frequency Applications: 3.3pF Capacitance: ±0.1pF Connector Type: 50V Function: C0G, NP0 Logic Type: High Q, Low Loss Number of Channels: - Proto Board Type: 0.040 L x 0.020 W (1.02mm x 0.51mm) Resistance (Ohms): Voltage - Off State: -55°C ~ 125°C Circuit: Surface Mount, MLCC, TIM10118L Datasheet May 21, 2014 MICROWAVE POWER GaAs FET. TIM1011 - 8L . Copyright 2005-2014 TOSHIBA CORPORATION, All Rights Reserved. 0_20140521_No1138. TIM1011 -4L. TECHNICAL DATA. FEATURES. HIGH POWER. BROAD BAND INTERNALLY MATCHED FET. P1dB=36.5dBm at 10.7GHz to 11.7GHz. TIM1011 -15L. TECHNICAL DATA. FEATURES. HIGH POWER. BROAD BAND INTERNALLY MATCHED FET. P1dB=42.0dBm at 10.7GHz to 11.7GHz. May 21, 2014 TIM1011 -10L. Copyright 2005-2014 TOSHIBA CORPORATION, All Rights Reserved. 0_20140521_No1141. Page: 1 / 4. FEATURES. TIM1011 -10L. TECHNICAL DATA. FEATURES. LOW INTERMODULATION DISTORTION HIGH GAIN. IM3=-45 dBc at Pout= 29.0dBm. G1dB=6.0 dB at 10.7 ...
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