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【55GN01CATBE Transistors - Bipolar (BJT) - RF ON Semiconductor】【EKXG161ELL331MMN3S】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

55GN01CATBE

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Brand:

ON Semiconductor

Description:

TRANS NPN BIPOLAR 10V 70MA CP

Series:

-

Packaging:

Tape & Reel (TR)

Transistor Type:

NPN

Voltage - Collector Emitter Breakdown (Max):

10V

Frequency - Transition:

4.5GHz

Noise Figure (dB Typ @ f):

1.9dB @ 1GHz

Gain:

9.5dB

Power - Max:

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 10mA, 5V

Current - Collector (Ic) (Max):

70mA

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

TO-236-3, SC-59, SOT-23-3

Supplier Device Package:

3-CP

Search For 55GN01CATBE - 55GN01CATBE Product Information : 

EKXG161ELL331MMN3S CAP ALUM 330UF 20% 160V RADIAL Series: KXG Amplifier Type: General Purpose Applications: 330μF Capacitance: ±20% ...
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Part NumberPart Number BrandD/CQtyCountry /
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Company

55GN01CA-TB-E

55GN01CA-TB-E ON Semiconductor15+15000China
Dedicate Electronics (HK) Limited  7

55GN01CA-TB-E

55GN01CA-TB-E ON1420+27611China
Hongkong Intercell Electronics Co.,Limited  7

55GN01CA-TB-E

55GN01CA-TB-E ON1420+25300China
Hong Kong In Fortune Electronics Co., Limited  12

55GN01CA-TB-E

55GN01CA-TB-E ON Semiconductor2016+15000China
MY Group (Asia) Limited  13

55GN01CA-TB-E

55GN01CA-TB-E SANYO1792China
Izzition E-Technology Co., Limited  12

EKXG161ELL331MMN3S

EKXG161ELL331MMN3S NipponChem20000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3

EKXG161ELL331MMN3S

EKXG161ELL331MMN3S United Chemi-Con81800Hong Kong
AIC Semiconductor Co., Limited  4

EKXG161ELL331MMN3S

EKXG161ELL331MMN3S United Chemi-Con11332Hong Kong
HongKong Wanghua Technology Limited 3

EKXG161ELL331MMN3S

EKXG161ELL331MMN3S 15+70730China
Bonase Electronics (HK) Co., Limited  12

EKXG161ELL331MMN3S

EKXG161ELL331MMN3S chemi-con20123900China
MY Group (Asia) Limited  13

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