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【AO4830】【Transistors - FETs, MOSFETs - Arrays】【AO】【AOS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

AO4830

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 2N-CH 80V 3.5A 8SOIC

Series:

-

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Dual)

FET Feature:

Standard

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

3.5A

Rds On (Max) @ Id, Vgs:

75 mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

770pF @ 40V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SOIC

Search For AO4830 - AO4830 Product Information : 

MOSFET 2N-CH 80V 3.5A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25~C: 3.5A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250米A Gate Charge (Qg) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) @ Vds: 770pF @ 40V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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AO4830

AO4830  AO 14+ 12000China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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AO4830

AO4830  AO 2016+SOIC-8 850000
In-Stock
China
Far East Electronics Technology Limited E-Catalog 12th Year Member

AO4830

AO4830  AOS 17+SOP-8 20000Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

AO4830

AO4830  Alpha Omega Sem... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

AO4830

AO4830  AOSMD 1548+SOP 98260China
Lattice International Trading Co., Limited E-Catalog 9th Year Member

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MOSFET 2N-CH 80V 3.5A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25~C: 3.5A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250米A Gate Charge (Qg) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) @ Vds: 770pF @ 40V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC HKinDataSheet_ZO1GOSIT
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