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【APTM100A13SG】【MSC】【MICROSEMI】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 1000V 65A SP6 Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25~C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40~C ~ 150~C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6 HKinDataSheet_ZO1GOSIT
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APTM100A13SG

APTM100A13SG  MSC 2015+ 101China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

APTM100A13SG

APTM100A13SG  Microsemi 38273Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

APTM100A13SG

APTM100A13SG  Microsemi Corpo... 2016+ 18000China
MY Group (Asia) Limited E-Catalog 12th Year Member

APTM100A13SG

APTM100A13SG  MICROSE 12+ 200Hong Kong
USA R&K Holdings Group Co. Limited. E-Catalog 8th Year Member

APTM100A13SG

APTM100A13SG  MOCROSEMI 2017 1Hong Kong
LETRADE LIMITED E-Catalog 1st Year Member

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MOSFET 2N-CH 1000V 65A SP6 Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25~C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40~C ~ 150~C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6 HKinDataSheet_ZO1GOSIT
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