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【AUIRF7303Q】【CHIPMALL】【IR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 30V 5.3A 8SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 5.3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100米A Gate Charge (Qg) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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AUIRF7303Q

AUIRF7303Q  SOP8 10394China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

AUIRF7303Q

AUIRF7303Q  ChipMall 12+ 6000China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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AUIRF7303Q

AUIRF7303Q  14+SO-8 28789China
International Smart Trading Limited E-Catalog 3rd Year Member

AUIRF7303Q

AUIRF7303Q  IR SOP8 6305Hong Kong
Hongkong Rixin International Trading Company E-Catalog 1st Year Member

AUIRF7303Q

AUIRF7303Q  IR 2015+ 5000China
Shenzhen Meilejoy Co.,Limited 1st Year Member

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MOSFET 2N-CH 30V 5.3A 8SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 5.3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100米A Gate Charge (Qg) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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