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【AUIRF7342QTR】【INTERNATIONAL RECTIFIER】【INFINEON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2P-CH 55V 3.4A 8SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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AUIRF7342QTR

AUIRF7342QTR  International R... 16213Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

AUIRF7342QTR

AUIRF7342QTR  INFINEON 1000Taiwan
E-Power Market Co.,Ltd E-Catalog 9th Year Member

AUIRF7342QTR

AUIRF7342QTR  IR 1230+SOP8 21121China
Top Electronics Co., E-Catalog 12th Year Member

AUIRF7342QTR

AUIRF7342QTR  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

AUIRF7342QTR

AUIRF7342QTR  IR 12+SOP8 23565China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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MOSFET 2P-CH 55V 3.4A 8SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25~C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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