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【BD681G Transistors - Bipolar (BJT) - Single ON】【VS6EWH06FNTRE】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

BD681G

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

ON Semiconductor

Description:

TRANS NPN DARL 100V 4A TO225AA

Series:

-

Packaging:

Bulk

Transistor Type:

NPN - Darlington

Current - Collector (Ic) (Max):

4A

Voltage - Collector Emitter Breakdown (Max):

100V

Vce Saturation (Max) @ Ib, Ic:

2.5V @ 30mA, 1.5A

Current - Collector Cutoff (Max):

500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:

750 @ 1.5A, 3V

Power - Max:

40W

Frequency - Transition:

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-225AA, TO-126-3

Supplier Device Package:

TO-225AA

Search For BD681G - BD681G Product Information : 

BD681G TRANS NPN DARL 100V 4A TO225AA Series: - Amplifier Type: Through Hole Applications: TO-225AA, TO-126-3 Capacitance: TO-225AA ...
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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

BD681G

BD681G ON02+60China
CHIPMALL ELECTRONICS LIMITED  3

BD681G

BD681G ON43000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3

BD681G

BD681G ON7194China
Hongkong Intercell Electronics Co.,Limited  7

BD681G

BD681G 5865China
Hong Kong In Fortune Electronics Co., Limited  12

BD681G

BD681G ON2015+20000China
Bonase Electronics (HK) Co., Limited  12

VS-6EWH06FNTR-E

VS-6EWH06FNTR-E vishay1500Taiwan
Corich International Ltd. 13

VS-6EWH06FNHM3

VS-6EWH06FNHM3 Vishay Semiconductor Diodes Division2016+18000China
MY Group (Asia) Limited  13

VS6EWH06FNM3

VS6EWH06FNM3 vishay20122775China
ICK Internation (HK) Co., Limited 6

VS6EWH06FNM3

VS6EWH06FNM3 vishay122775USA
ComSIT, Inc 1

VS-6EWH06FNTRHM3

VS-6EWH06FNTRHM3 VISHAY201512000China
Thoustech International Electronics Limited2

Buy: BD681G, VS6EWH06FNTRE
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VS6EWH06FNTRE | CJU111733V | BD681STU | 621119793 | BD682 | S07DM08 | BD682STU | BD6861FSDE2 | R3111Q411CTR | S07GM08
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