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【BF1009SE6327】【SIE】【INFINEO】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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2007-04-20. 1. BF1009S Silicon N-Channel MOSFET Tetrode. For low noise, high gain controlled input stage up to 1 GHz. Operating voltage 9 V. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

BF1009SE6327

BF1009SE6327  sie 95 3000USA
ComS.I.T. Inc. E-Catalog 1st Year Member

BF1009

BF1009  SOT-143 52185China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

BF1009SR E6327

BF1009SR E6327  INFINEO 14+SOT243 174000
In-Stock
Hong Kong
JFJ Electronics Co.,Limited E-Catalog 13th Year Member

BF1009

BF1009  INFINEON 2014+SOT143 16185China
Taiwan Anprosperous Technology Co.,Limited E-Catalog 11th Year Member

BF1009

BF1009  INFINEON 08+SOT-23 21000China
HK Xinyuhang Electronic Co.,Ltd E-Catalog 12th Year Member

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CRCW06031K00FKTABC

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NM1FETX
[hkinbatch022] [hkingendate20170919] [hkingenidC26432][hkinOfferInventC]
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2007-04-20. 1. BF1009S Silicon N-Channel MOSFET Tetrode. For low noise, high gain controlled input stage up to 1 GHz. Operating voltage 9 V. HKinDataSheet_ZO1GOSIT
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