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【BL8156 BELLING】【MC14011UBDR2G】【BYM10200E3/96】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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BL8156, MC14011UBDR2G, BYM10200E3/96
 Part NumberBrandD/CQtyCompany
BL8156CBELLING06+497Hongkong Intercell Electronics Co.,Limited    6
MC14011UBDR2GON07+2655Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
MC14011UBDR2GON07+3000CHIPMALL ELECTRONICS LIMITED    2
MC14011UBDR2GON2012+11250Splendent Technologies Pte Ltd    3
MC14011UBDR2GON10+500Wah Tat Electronics Hongkong Co.Ltd   6
MC14011UBDR2G
 
ON2013+174Asia Components Co.,Limited    9
BYM10-200-E3/96GS4788Hong Kong In Fortune Electronics Co., Limited    11
BYM10-200-E3/96VISHAY2015+40000Bonase Electronics (HK) Co., Limited    11
BYM10-200-E3/96Vishay Semiconductors16715HongKong Wanghua Technology Limited   2
BYM10-200-E3/96VIS3300Takson Electronics (H.K.) Co., Ltd.   3
BYM10-200-E3/96GS3878Yu Hong Technologies Limited   1

BL8156 Description

Datasheet DDR4 SDRAM. EDY4016A - 256Mb x 16. Features. VDD = VDDQ = 1.2V 60mV. VPP = 2.5V, 125mV/+250mV. On-die, internal, adjustable VREFDQ Nov 11, 2011 Automotive DDR3L SDRAM. MT41K1G8 128 Meg x 8 x 8 banks. MT41K512M16 64 Meg x 16 x 8 banks. Description. DDR3L (1.35V) Nov 11, 2011 DDR3L SDRAM. MT41K2G4 256 Meg x 4 x 8 banks. MT41K1G8 128 Meg x 8 x 8 banks. MT41K512M16 64 Meg x 16 x 8 banks.

MC14011UBDR2G Description

IC GATE NAND 4CH 2-INP 14-SOIC Series: 4000B Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1米A Current - Output High, Low: 3.5mA, 8.8mA Logic Level - Low: 1 V ~ 2.5 V Logic Level - High: 4 V ~ 12.5 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -55~C ~ 125~C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154, 3.90mm Width)

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BL8156 Ref.: [hkinbatch20161020] [HGCacheDateZOITOIZZ] [HGReferer_STC_Overview]
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