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【BSB012NE2LX Transistors - FETs, MOSFETs - Single Infineon Technologies】【GS881E36CGD150I】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

BSB012NE2LX

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 25V 170A WDSON-2

Series:

OptiMOS

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25V

Current - Continuous Drain (Id) @ 25°C:

37A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

67nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4900pF @ 12V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 57W (Tc)

Rds On (Max) @ Id, Vgs:

1.2 mOhm @ 30A, 10V

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

MG-WDSON-2, CanPAK M

Package / Case:

3-WDSON

Search For BSB012NE2LX - BSB012NE2LX Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

BSB012NE2LX

BSB012NE2LX 1000Hong Kong
Lungke Electronics Technology Co., Limited  7

BSB012NE2LX

BSB012NE2LX Infineon Technologies2016+1000China
MY Group (Asia) Limited  13

BSB012N03LX3

BSB012N03LX3 INFINEON2015+4000China
Bonase Electronics (HK) Co., Limited  12

BSB012N03LX3G

BSB012N03LX3G 1000Hong Kong
Lungke Electronics Technology Co., Limited  7

BSB012N03LX3

BSB012N03LX3 INFINEON09+2286China
HK Jiaweiyi Technology Limited  12

GS881E36BD-200

GS881E36BD-200 200China
CHIPMALL ELECTRONICS LIMITED  3

GS881E18BD-200

GS881E18BD-200 GSI8800Hong Kong
Ouerte Technology (HK)Limited 7

GS881E36BD-200

GS881E36BD-200 GSI1314+1735China
Yu Hong Technologies Limited 2

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