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【BSC036NE7NS3GATMA1】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【INFINEON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

BSC036NE7NS3GATMA1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 75V 100A TDSON-8

Series:

OptiMOS

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

75V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

3.8V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:

63.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4400pF @ 37.5V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 156W (Tc)

Rds On (Max) @ Id, Vgs:

3.6 mOhm @ 50A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8

Package / Case:

8-PowerTDFN

Search For BSC036NE7NS3GATMA1 - BSC036NE7NS3GATMA1 Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
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Company

BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1  Infineon Techno... 11234Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1  INFINEON 5000France
FantastIC Sourcing E-Catalog 13th Year Member

BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1  Infineon Techno... 2016+ 15000China
MY Group (Asia) Limited E-Catalog 13th Year Member

BSC036NE7NS3 G

BSC036NE7NS3 G  INFINEO 1608+QFN 28960China
Ande Electronics Co., Limited E-Catalog 12th Year Member

BSC036NE7NS3G

BSC036NE7NS3G  INFINEON QFN8 19300China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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