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【BSC072N03LD Transistors - FETs, MOSFETs - Arrays INFINEON】【GS88236CGB250IV】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

BSC072N03LD

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 11.5A 8TDSON

Series:

OptiMOS

Packaging:

2 N-Channel (Dual)

FET Type:

Tape & Reel (TR)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

11.5A

Rds On (Max) @ Id, Vgs:

7.2 mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

41nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3500pF @ 15V

Power - Max:

57W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerVDFN

Supplier Device Package:

PG-TDSON-8

Search For BSC072N03LD - BSC072N03LD Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

BSC072N03LD G

BSC072N03LD G INFINEON09+783China
Ande Electronics Co., Limited  12

BSC072N03LD G

BSC072N03LD G INFINEON65000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3
Warranty

BSC072N03LD G

BSC072N03LD G INFINEON34000China
CHIPMALL ELECTRONICS LIMITED  3

BSC072N03LD G

BSC072N03LD G Infineon08+299Hong Kong
JFJ Electronics Co.,Limited  13

BSC072N03LD G

BSC072N03LD G INFINEONTECH1113+10900China
Hong Kong In Fortune Electronics Co., Limited  12
Warranty

GS88236BB-250

GS88236BB-250 GSI06+94China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

GS88236B-80

GS88236B-80 GSI TECHNOLOGY8520China
Riking Technology (HK) Co., Limited  8

GS88236B-11

GS88236B-11 GSI1135China
Xian Neng Technology (Hongkong) International Limited  12
Warranty

GS88236BB-250

GS88236BB-250 GSI10+65China
HK TWO L ELECTRONIC LIMITED  6

GS88236BB-250

GS88236BB-250 GSI0620+64China
Yu Hong Technologies Limited 2

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GS88236CGB250IV | 15SCMJ120APTGP | RH101AH | BSC072N03LDG | BSC076N06NS3 | BSC076N06NS3 | BSC076N06NS3G | RH101AW | 15SCMJ120CAPTGP | RH1021CMH10
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