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【BSO4410T Transistors - FETs, MOSFETs - Single Infineon】【1N5623GP】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

BSO4410T

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 11.1A 8-SOIC

Series:

OptiMOS

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

11.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2V @ 42µA

Gate Charge (Qg) (Max) @ Vgs:

21nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

1280pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta)

Rds On (Max) @ Id, Vgs:

13 mOhm @ 11.1A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Search For BSO4410T - BSO4410T Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

BSO4410T

BSO4410T Infineon12+2500China
Sino Star Electronics (HK) Co.,Limited 12

BSO4410T

BSO4410T Infineon Technologies2016+1000China
MY Group (Asia) Limited  13
STRC

BSO4410

BSO4410 Infineon10000China
Kang Da Electronics Co.  13

BSO4410

BSO4410 INFINEON0352+3684China
Hong Kong In Fortune Electronics Co., Limited  13

BSO4410

BSO4410 Infineon03+/04+11800China
Yusheng Electronics (HK) Limited 6

1N5623GP

1N5623GP VISHAY20075000000China
Yisoning Technology Limited2

1N5623

1N5623 Microsemi Corporation2016+18000China
MY Group (Asia) Limited  13

1N5623GP-E3/54

1N5623GP-E3/54 GS4788China
Hong Kong In Fortune Electronics Co., Limited  13

1N5623JANTX

1N5623JANTX Microsemi2015+1400China
Bonase Electronics (HK) Co., Limited  12

1N5623

1N5623 MICROSEMI142France
FantastIC Sourcing 13

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1N5623GP | 54F113/BCA | BSO4410 | RJP30Y2ADPPMBT2 | 3509226P | RJP4001ASA | RJP4002ANS | RJP4002ANS00Q1 | 3509671P | RJP4002ANS00Q1
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