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【CGH27030S MITSUBISHI】【MIC5252285BMLTR】【CKCA43X7R1C104MT010】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA

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CGH27030S, MIC5252285BMLTR, CKCA43X7R1C104MT010
 Part NumberBrandD/CQtyCompany
CGH27015FMITSUBISHI13/14+750Tide Electronic Co.,Limited    7
MICREL0519+18611Hongkong Intercell Electronics Co.,Limited    6
MICREL0519+12039JFJ Electronics Co.,Limited    12
MIC5252-2.85BMLTR05+675N&S Electronic Co., Limited    4
CKCA43X7R1C104MT010TDK13+3928Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    13
CKCA43X7R1C104MT010TDK4828Hong Kong In Fortune Electronics Co., Limited    11
CKCA43X7R1C104MT010TDK3928Nantian Electronics Co., Limited    8
CKCA43X7R1C104MT0Y9NTDK22973FantastIC Sourcing   12
CKCA43CH1H101KT010NTDK09+15708HK Jiaweiyi Technology Limited    11

CGH27030S Description

Crees CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor. (HEMT) Measured in the CGH27030S -AMP1 application circuit. Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,. Comms 1. Subject to change without notice. www.cree.com/rf. CGHV1F006S. 6 W, DC - 18 GHz, 40V, GaN HEMT. Crees CGHV1F006S is an unmatched, gallium nitride 1. Subject to change without notice. www.cree.com/rf. CGHV40030. 30 W, DC - 6 GHz, 50V, GaN HEMT. Crees CGHV40030 is an unmatched, gallium nitride Aug 15, 2013 This declaration covers the following products (Products) manufactured by or on behalf of Cree, Inc. and its subsidiaries. (collectively Cree )

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CGH27030S Ref.: [hkinbatch20160715] [HGReferer_STC_Overview]
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