【CGH27030S MITSUBISHI】【MIC5252285BMLTR】【CKCA43X7R1C104MT010】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA
Crees CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor. (HEMT) Measured in the CGH27030S -AMP1 application circuit. Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,. Comms 1. Subject to change without notice. www.cree.com/rf. CGHV1F006S. 6 W, DC - 18 GHz, 40V, GaN HEMT. Crees CGHV1F006S is an unmatched, gallium nitride 1. Subject to change without notice. www.cree.com/rf. CGHV40030. 30 W, DC - 6 GHz, 50V, GaN HEMT. Crees CGHV40030 is an unmatched, gallium nitride Aug 15, 2013 This declaration covers the following products (Products) manufactured by or on behalf of Cree, Inc. and its subsidiaries. (collectively Cree )
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CGH27030S Ref.: [hkinbatch20160715] [HGReferer_STC_Overview]
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