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【CGH27030S MITSUBISHI】【MIC5252285BMLTR】【CKCA43X7R1C104MT010】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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Tide Electronic Co.,Limited, Zhengxinyuan Electronics (HK) Co., Limited ...
Product Information1 - 13 of 13 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

CGH27015F

CGH27015F MITSUBISHI15/16+750China
Tide Electronic Co.,Limited  8

CGH27060

CGH27060 ZTE259China
Zhengxinyuan Electronics (HK) Co., Limited  12

CGH27015F

CGH27015F 58Hong Kong
Lungke Electronics Technology Co., Limited  7

MIC5252-2.85BMLTR

MIC5252-2.85BMLTR MICREL0519+2207Singapore
Splendent Technologies Pte Ltd  3

MIC5252-2.85BMLTR

MIC5252-2.85BMLTR MICREL0519+12000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14

MIC5252-2.85BMLTR

MIC5252-2.85BMLTR MICREL0519+12039Hong Kong
Hongkong Rixin International Trading Company  1

MIC5252-2.85BML-TR

MIC5252-2.85BML-TR Microchip Technology2016+10000China
MY Group (Asia) Limited  12

MIC5252-2.85BMLTR

MIC5252-2.85BMLTR MICREL2015+12000China
Bonase Electronics (HK) Co., Limited  11

CKCA43X7R1C104MT010

CKCA43X7R1C104MT010 TDK13+3928China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14

CKCA43X7R1C104MT010

CKCA43X7R1C104MT010 TDK13+4828China
Hong Kong In Fortune Electronics Co., Limited  12

CKCA43X7R1C104MT010

CKCA43X7R1C104MT010 N/A26400Hong Kong
HongKong Wanghua Technology Limited 3

CKCA43X7R1C104MT010

CKCA43X7R1C104MT010 TDK3928China
WALTON ELECTRONICS CO., LIMITED  1

CKCA43X7R1C104MT010

CKCA43X7R1C104MT010 15+48190China
Yu Hong Technologies Limited 1

Buy: CGH27030S, MIC5252285BMLTR, CKCA43X7R1C104MT010
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MIC5252285BMLTR | CKCA43X7R1C104MT010 | CGE6E18H5FWB14 | CGE9E28H15XB | CGF029M7 | CGF039M1SMP | CGF25S | CGG128128 | CGG200F12 | CGGJ2N3716 | CGH1/2501004
 [hkinbatch20170420] [HGCacheDateZOITOTZO] [HGReferer_STC_Overview] [HKINPDSTYLE]
CGH27030S Crees CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor. (HEMT) Measured in the CGH27030S -AMP1 application circuit. Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,. Comms 1. Subject to change without notice. www.cree.com/rf. CGHV1F006S. 6 W, DC - 18 GHz, 40V, GaN HEMT. Crees CGHV1F006S is an unmatched, gallium nitride 1. Subject to change without notice. www.cree.com/rf. CGHV40030. 30 W, DC - 6 GHz, 50V, GaN HEMT. Crees CGHV40030 is an unmatched, gallium nitride Aug 15, 2013 This declaration covers the following products (Products) manufactured by or on behalf of Cree, Inc. and its subsidiaries. (collectively Cree )

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