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【CGH27030S MITSUBISHI】【MIC5252285BMLTR】【CKCA43X7R1C104MT010】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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CGH27030S, MIC5252285BMLTR, CKCA43X7R1C104MT010
 Part NumberBrandD/CQtyCompany
CGH27015F58Lungke Electronics Technology Co., Limited    6
CGH27015FMITSUBISHI15/16+750Tide Electronic Co.,Limited    7
MIC5252-2.85BMLTRMICREL0519+12000Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
MIC5252-285BMLTR
 
MICREL0519+18611Hongkong Intercell Electronics Co.,Limited    6
MIC5252-2.85BMLTR
 
MICREL0519+12039JFJ Electronics Co.,Limited    12
MIC5252-2.85BMLTRMICREL12039Shenzhen Zhengrun Electronics Co.,Ltd   13
MIC5252-2.85BMLTRMICREL0519+12039Hongkong Rixin International Trading Company    1
CKCA43X7R1C104MT010TDK13+3928Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
CKCA43X7R1C104MT010TDK13+4828Hong Kong In Fortune Electronics Co., Limited    11
CKCA43X7R1C104MT010N/A26400HongKong Wanghua Technology Limited   2
CKCA43X7R1C104MT010TDK3928WALTON ELECTRONICS CO., LIMITED   1
CKCA43X7R1C104MT01048190Yu Hong Technologies Limited   1

CGH27030S Description

Crees CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor. (HEMT) Measured in the CGH27030S -AMP1 application circuit. Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,. Comms 1. Subject to change without notice. www.cree.com/rf. CGHV1F006S. 6 W, DC - 18 GHz, 40V, GaN HEMT. Crees CGHV1F006S is an unmatched, gallium nitride 1. Subject to change without notice. www.cree.com/rf. CGHV40030. 30 W, DC - 6 GHz, 50V, GaN HEMT. Crees CGHV40030 is an unmatched, gallium nitride Aug 15, 2013 This declaration covers the following products (Products) manufactured by or on behalf of Cree, Inc. and its subsidiaries. (collectively Cree )

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CGH27030S Ref.: [hkinbatch20161020] [HGCacheDateZOITOIIB] [HGReferer_STC_Overview]
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