【NAND04GW3C2BN6E STM】【DS90C1117AVJD】【EA1TMU3CN】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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EA1TMU3CN Description

IC FLASH 4GBIT 48TSOP Series: - Format - Memory: FLASH Memory Type: FLASH - NAND Memory Size: 4G (512M x 8) Speed: - Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40~C ~ 85~C Package / Case: 48-TFSOP (0.724, 18.40mm Width) Supplier Device Package: 48-TSOP
1 - 10 of 10 Record(s)
NAND04GW3C2BN6E, DS90C1117AVJD
 Part NumberBrandD/CQtyCompany

NAND04GW3C2BN6E
 

STM399Hongkong Intercell Electronics Co.,Limited    7

NAND04GW3C2BN6E

13+5000TY International components Limited    7

NAND04GW3C2BN6E

576Hong Kong In Fortune Electronics Co., Limited    12

NAND04GW3C2BN6E

STM08+650HK TWO L ELECTRONIC LIMITED    6

NAND04GW3C2BN6E

STM0843+283Splendent Technologies Pte Ltd    4

DS90C124IVSX

NSC0830+4446Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    15

DS90C124IVS

DALLAS16+62000APEX ELECTRONICS CO., LIMITED   3

DS90C124IVS

nsc500ComSIT, Inc   1

DS90C124IVS

GODE1215+1194Yu Hong Technologies Limited   2

DS90C124QVS

NS16+5000ShenZhen HuaXingWei Electronics Co., Ltd.    1

Related Part Number

NAND04GW3C2BN6E | DS90C1117AVJD | EA1791A | EA1791A | EA1880 | EA191M | EA2000 | EA203B | EA203B150A | EA2060MT | EA206S
EA1TMU3CN Ref.:
[hkinbatch20170720]
[HGCacheDateZOIBOIIB]
[HGReferer_AboutUs]
[HKIN20171020GESTYLE]

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