【NDS8858H NS】【DS90C13729AVJD】【EEFUEJ221LR】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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EEFUEJ221LR Description

MOSFET N/P-CH 30V 8SOIC Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.3A, 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250米A Gate Charge (Qg) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) @ Vds: 720pF @ 15V Power - Max: 1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC
1 - 10 of 10 Record(s)
NDS8858H, DS90C13729AVJD
 Part NumberBrandD/CQtyCompany


NS98+2096Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    15


FAIRCHILD04+1961Ande Electronics Co., Limited    12


4373TY International components Limited    7


TOSHIBA08+5333Worldsequence Co.,Ltd    9


NATIONAL6600Ouerte Technology (HK)Limited   7


NSC0830+4446Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    15




nsc500ComSIT, Inc   1


GODE1215+1194Yu Hong Technologies Limited   2


NS16+5000ShenZhen HuaXingWei Electronics Co., Ltd.    1

Related Part Number

NDS8858H | DS90C13729AVJD | EEFUE0J181R | EEFUE0J221LR | EEFUE0J221R | EEFUEOJ151R | EEFUEOK101R | EEG0K304CLV | EEG1B303CLN | EEG1K306CLL | EEG2102

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