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【EM6K31GT2R】【ROHM】【ROHM SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 60V 0.25A EMT6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 HKinDataSheet_ZO1GOSIT
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EM6K31GT2R

EM6K31GT2R  ROHM 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

EM6K31GT2R

EM6K31GT2R  ROHM 14+SOT363 3016China
Hongkong Intercell Electronics Co.,Limited E-Catalog 7th Year Member

EM6K31GT2R

EM6K31GT2R  Rohm Semiconduc... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

EM6K31T2R

EM6K31T2R  ROHM 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

EM6K31T2R

EM6K31T2R  Rohm Semiconduc... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 12th Year Member

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MOSFET 2N-CH 60V 0.25A EMT6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 HKinDataSheet_ZO1GOSIT
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