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【EM6K31GT2R】【Transistors - FETs, MOSFETs - Arrays】【ROHM】【ROHM SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

EM6K31GT2R

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Rohm Semiconductor

Description:

MOSFET 2N-CH 60V 0.25A EMT6

Series:

-

Packaging:

Cut Tape (CT)

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

250mA

Rds On (Max) @ Id, Vgs:

2.4 Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id:

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

15pF @ 25V

Power - Max:

120mW

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

EMT6

Search For EM6K31GT2R - EM6K31GT2R Product Information : 

MOSFET 2N-CH 60V 0.25A EMT6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 HKinDataSheet_ZO1GOSIT
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

EM6K31GT2R

EM6K31GT2R  ROHM 1437+SOT363 1980China
Ande Electronics Co., Limited E-Catalog 12th Year Member

EM6K31GT2R

EM6K31GT2R  ROHM 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

EM6K31GT2R

EM6K31GT2R  Rohm Semiconduc... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

EM6K31

EM6K31  ROHM 2016+SOT563 7825China
Ande Electronics Co., Limited E-Catalog 12th Year Member

EM6K31 T2R

EM6K31 T2R  ROHM 16+ 16550
In-Stock
Hong Kong
C & I Semiconductors Co., Limited E-Catalog 8th Year Member

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MOSFET 2N-CH 60V 0.25A EMT6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6 HKinDataSheet_ZO1GOSIT
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