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【NTMD3P03R2G ON】【DS90C2776AVJD】【ESW31AP0500G】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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NTMD3P03R2G, DS90C2776AVJD
 Part NumberBrandD/CQtyCompany
NTMD3P03R2GON0822+27Amos Electronics Co., Limited    10
NTMD3P03R2G
 
ON10+5000Huahui (Hongkong) Electron Limited   2
NTMD3P03R2GON1035+3605Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
NTMD3P03R2GORIGINAL2016+1000Hongkong Rixin International Trading Company    1
NTMD3P03R2G35190Hong Kong In Fortune Electronics Co., Limited    12
DS90C2776AVJD100CHIPMALL ELECTRONICS LIMITED    2
DS90C241IVSNS2016+6361Hongkong Rixin International Trading Company    1
DS90C241IVSNSC191Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
DS90C241QVSXNSC927Shenzhen Zhengrun Electronics Co.,Ltd   13
DS90C241IVSNEC201620000Shenzhen KHS Electronics Company   13

ESW31AP0500G Description

MOSFET 2P-CH 30V 2.34A 8SOIC Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 2.34A Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) @ Vds: 750pF @ 24V Power - Max: 730mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC
ESW31AP0500G Ref.: [hkinbatch20170120] [HGCacheDateZOITOEZG] [HGReferer_SD_Ecatalog] [HKINGESTYLE]

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