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【EXBA10E621J N/A】【AO4613】【PME271Y547MR19TOPME271Y547MR30】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA

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 Part NumberBrandD/CQtyCompany
PME271M622KR30KEMET201112000Yingxinyuan INT'L (Group) Limited    13

EXBA10E621J, AO4613, PME271Y547MR19TOPME271Y547MR30
 Part NumberBrandD/CQtyCompany
EXBA10E621JN/A18765HongKong Wanghua Technology Limited   2
EXBA10E621J3800Greensemitech HK co., ltd  2
EXBA10P103JPANASONIC08+2794Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    13
EXBA10E152J03+4000Hong Kong In Fortune Electronics Co., Limited    11
EXBA10E472JPANASONIC7992Bright Spot Technology Development Co., Ltd.    10
Alpha Omega Semiconductor Inc13+20000Dedicate Electronics (HK) Limited    6
AO4613AOSMD16+39000Yingxinyuan INT'L (Group) Limited    13
AO4613AOS147680BOZX Electronics Co., Limited  1
ALPHAOM..12+3000Sino Star Electronics (HK) Co.,Limited   10
PME271Y547MR19TO(PME271Y547MR30Kemet9000Hongkong Shengshi Electronics Limited   2
PME271M622KR30Evox-Rifa7094Belt (HK) Electronics Co    10
PME271Y410MR30KEMET2014300Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    13

AO4613 Description

MOSFET N/P-CH 30V 8SOIC Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC

Related Part Number

EXB723 | EXB841 | EXB842 | EXB8420A | EXB842OA | EXB844 | EXB851 | EXB8705 | EXBAL5R100J

EXBA10E621J Related Keywords in 2016 USA

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EXBA10E621J Ref.: [hkinbatch20160715] [HGReferer_SD_Ecatalog]
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