【F2116BG20VH8S/2116V HITACHI】【AON5820】【MAX222CDWR】HKinventory - Suppliers in 2016【Price】【Datasheet PDF】USA
MOSFET 2N-CH 20V 10A 6DFN Series: - FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 10A Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1510pF @ 10V Power - Max: 1.7W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)
IC TXRX DUAL RS232 5V 18-SOIC Series: - Type: Transceiver Protocol: RS232 Duplex: Full Receiver Hysteresis: 500mV Data Rate: 200Kbps Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0～C ~ 70～C Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295, 7.50mm Width) Supplier Device Package: 18-SOIC
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F2116BG20VH8S/2116V Ref.: [hkinbatch20160715] [HGReferer_SD_Ecatalog]
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