F6668B Aug 28, 2006 Description. The IRF6668PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packag-., AOWF412 The AOWF412 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding This AOS product reliability report summarizes the qualification result for AOWF412 . Accelerated environmental tests are performed on a specific sample size, Page 1. ALPHIA & OMEGA . SEMICONDUCTOR ==== TO262F PACKAGE MARKING DESCRIPTION. O ~p O. W F4 12. FA Y W L T. Green product. ...
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