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【FDG311N Transistors - FETs, MOSFETs - Single FAIRCHILD】【2SA1579T106R】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

FDG311N

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Fairchild/ON Semiconductor

Description:

MOSFET N-CH 20V 1.9A SC70-6

Series:

PowerTrench

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

270pF @ 10V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

750mW (Ta)

Rds On (Max) @ Id, Vgs:

115 mOhm @ 1.9A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SC-70-6

Package / Case:

6-TSSOP, SC-88, SOT-363

Search For FDG311N - FDG311N Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

FDG311N

FDG311N FAIRCHILD2593China
Kehai Weiye International Electronics Limited  11

FDG311N

FDG311N FAIRCHILD00+100China
CHIPMALL ELECTRONICS LIMITED  3

FDG311N

FDG311N FAIRCHILD20164240China
JM COMPONENTS LIMITED  1

FDG311N

FDG311N FAIRCHILD03+4240China
3A COMPONENTS LIMITED 1

FDG311N_NL

FDG311N_NL FAIRCHILD0644+1809China
Sinno Electronics Co., Limited  8

2SA1579T106R

2SA1579T106R ROHM13+2000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

2SA1579T106R

2SA1579T106R ROHM2469China
Hong Kong In Fortune Electronics Co., Limited  12

2SA1579T106R

2SA1579T106R ROHM0624+6000Hong Kong
Hongkong Rixin International Trading Company  2

2SA1579T106R

2SA1579T106R ROHM20102864Japan
Pacific Corporation  17

2SA1579T106R

2SA1579T106R ROHM2015+9123China
Bonase Electronics (HK) Co., Limited  12

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2SA1579T106R | FDG311N | TSM103IDT | C1608X5R1A334M | TSM103IDT | TSM103WA/DAS001 | TSM103WAI | C1608X5R1C224K | TSM103WAID | TSM103WAIDTT
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