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【FQD6N25TM Transistors - FETs, MOSFETs - Single FAIRCHILD】【B32562H1475K000】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

FQD6N25TM

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Fairchild/ON Semiconductor

Description:

MOSFET N-CH 250V 4.4A DPAK

Series:

QFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250V

Current - Continuous Drain (Id) @ 25°C:

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

300pF @ 25V

Vgs (Max):

±30V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 45W (Tc)

Rds On (Max) @ Id, Vgs:

1 Ohm @ 2.2A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D-Pak

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Search For FQD6N25TM - FQD6N25TM Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

FQD6N25TM

FQD6N25TM FAIRCHILD16+20000Taiwan
Yingxinyuan INT'L (Group) Limited  14

FQD6N25TM

FQD6N25TM FAIRCHILD11+3250China
HK TWO L ELECTRONIC LIMITED 6

FQD6N25TM

FQD6N25TM FAI1600China
Sinno Electronics Co., Limited  8

FQD6N25TM

FQD6N25TM FAIRCHILD1119+22180China
Hong Kong In Fortune Electronics Co., Limited  12

FQD6N25TM

FQD6N25TM FSC2015+20000China
Bonase Electronics (HK) Co., Limited  12

B32562H1475K000

B32562H1475K000 TDK-EPCOS2015+30000China
Bonase Electronics (HK) Co., Limited  12

B32562H1475K000

B32562H1475K000 EPCOS22545Hong Kong
HongKong Wanghua Technology Limited 3

B32562J1475K

B32562J1475K EPCOS2108China
Top Electronics Co.,  12

B32562J8154K

B32562J8154K EPCOS04+45000China
Hong Kong In Fortune Electronics Co., Limited  12

B32562H8154K

B32562H8154K epcos1417000USA
ComSIT, Inc 1

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B32562H1475K000 | 90J1R8E | FQD6N25 | FQD6N25TF | 90J200 | RS2GBF | UM6522A | UM6576F | UM66P20 | FQD6N40
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