【FQP4N80 Transistors - FETs, MOSFETs - Single Fairchild】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

FQP4N80

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Fairchild/ON Semiconductor

Description:

MOSFET N-CH 800V 3.9A TO-220

Series:

QFET

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800V

Current - Continuous Drain (Id) @ 25°C:

3.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

880pF @ 25V

Vgs (Max):

±30V

FET Feature:

-

Power Dissipation (Max):

130W (Tc)

Rds On (Max) @ Id, Vgs:

3.6 Ohm @ 1.95A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 5 of 5 Record(s)
FQP4N80
 Part NumberBrandD/CQtyCompany

FQP4N80

Fairchild50000Hongkong Shengshi Electronics Limited    4
STRCWarranty

FQP4N80
 

FAIRCHIL4247Nosin (HK) Electronics Co.    13

FQP4N80

35411Hong Kong In Fortune Electronics Co., Limited    13
WarrantyNewAndOriginal

FQP4N80

ChipMall14+500CHIPMALL ELECTRONICS LIMITED    4

FQP4N80

FSC2008+6000Bonase Electronics (HK) Co., Limited    12

Related Part Number

FQP4N90 | FQP4N90C | FQP4N90 | FQP4N90C | FQP4P25 | FQP4P40 | FQP50N06 | FQP50N06L | FQP55N06 | FQP55N10 | FQP58N08
FQP4N80 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIIIS]
[HGReferer_MembershipFee]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

FQP4N80 Related Keywords in 2018 USA

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