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【FQPF30N06L Transistors - FETs, MOSFETs - Single FAIRCHILD】【142126】【R2G3B2CESB5039】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Fairchild/ON Semiconductor


MOSFET N-CH 60V 22.5A TO-220F





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

22.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

1040pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

38W (Tc)

Rds On (Max) @ Id, Vgs:

35 mOhm @ 11.3A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:


Package / Case:

TO-220-3 Full Pack

Search For FQPF30N06L - FQPF30N06L Product Information : 

FQPF30N06L DATASHEET Nov 1, 2013 175 C Maximum Junction Temperature Rating. Thermal Characteristics. Symbol. Parameter. FQPF30N06L . Unit. VDSS. Drain-Source Voltage. FQPF30N06L Rev. C1 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Jan 8, 2016 FQPF30N06L . FQPF30N06L . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF30N06L . TO220F-3. FSSZ. FSSZ. 2.11234. ...
1 - 6 of 6 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /


Hongkong Intercell Electronics Co.,Limited  7


FQPF30N06L Fairchild Semiconductor18100Hong Kong
HongKong Wanghua Technology Limited 4


FQPF30N06L FAIRCHILD13+13800Hong Kong
A & C Int'l Electronics Co.  11


FQPF30N06L Fairchild4788China
Hong Kong In Fortune Electronics Co., Limited  13


FQPF30N06L Fairchild/ON Semiconductor2016+14000China
MY Group (Asia) Limited  13


142126 N/A41282Hong Kong
HongKong Wanghua Technology Limited 4

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