Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 22.5A TO-220F
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
2.5V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
1040pF @ 25V
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
35 mOhm @ 11.3A, 10V
-55Â°C ~ 175Â°C (TJ)
Supplier Device Package:
Package / Case:
TO-220-3 Full Pack
Search For FQPF30N06L - FQPF30N06L Product Information :
FQPF30N06L DATASHEET Nov 1, 2013 175 C Maximum Junction Temperature Rating. Thermal Characteristics. Symbol. Parameter. FQPF30N06L . Unit. VDSS. Drain-Source Voltage. FQPF30N06L Rev. C1 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Jan 8, 2016 FQPF30N06L . FQPF30N06L . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF30N06L . TO220F-3. FSSZ. FSSZ. 2.11234. ...
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