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【FQPF30N06L FAIRCHILD】【142126】【R2G3B2CESB5039】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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FQPF30N06L, 142126
 Part NumberBrandD/CQtyCompany
FAIRCHILD201060Hongkong Intercell Electronics Co.,Limited    6
FQPF30N06LFairchild4788Hong Kong In Fortune Electronics Co., Limited    11
FQPF30N06LFAIRCHILD13+13800A & C Int'l Electronics Co.    9
FQPF30N06LFAIRCHILD2010200ICCN Electronic Technology Co.,Limited   1
142126N/A41282HongKong Wanghua Technology Limited   2
142126N/A88Sentai Trading Limited   4

FQPF30N06L Description

DATASHEET Nov 1, 2013 175 C Maximum Junction Temperature Rating. Thermal Characteristics. Symbol. Parameter. FQPF30N06L . Unit. VDSS. Drain-Source Voltage. FQPF30N06L Rev. C1 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Jan 8, 2016 FQPF30N06L . FQPF30N06L . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF30N06L . TO220F-3. FSSZ. FSSZ. 2.11234.

Related Part Number

FQPF40N10 | FQPF50N06 | FQPF5N80C | FQPF6N90 | FQPF8N50NZ | FQPF8N80A | FQPF9N90CT | FQPF9P25 | FQS25100N

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FQPF30N06L Ref.: [hkinbatch20161020] [HGCacheDateZOITOIZA] [HGReferer_SD_Ecatalog]
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