【FQPF30N06L FSC】【142126】【R2G3B2CESB5039】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA
| ||Part Number||Brand||D/C||Qty||Company|
|FSC||2016+||12532||Hongkong Rixin International Trading Company || || ||1|
|FAIRCHILD||13+||13800||A & C Int'l Electronics Co. || || ||10|
|Fairchild/ON Semiconductor||2016+||14000||MY Group (Asia) Limited || || ||12|
|Fairchild||4788||Hong Kong In Fortune Electronics Co., Limited || || ||12|
|FAIRCHILD||2010||200||ICCN Electronic Technology Co.,Limited || ||1|
|N/A||41282||HongKong Wanghua Technology Limited || ||3|
FQPF30N06L DescriptionDATASHEET Nov 1, 2013 175 C Maximum Junction Temperature Rating. Thermal Characteristics. Symbol. Parameter. FQPF30N06L . Unit. VDSS. Drain-Source Voltage. FQPF30N06L Rev. C1 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Jan 8, 2016 FQPF30N06L . FQPF30N06L . TO220F-3. Jan 08, 2016. 1.0. FSSZ. 2.11234 g. Each. Manufacturing Process Information. Terminal Finish. Jul 18, 2016 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQPF30N06L . TO220F-3. FSSZ. FSSZ. 2.11234.
FQPF30N06L Ref.: [hkinbatch20170420] [HGCacheDateZOITOTZA] [HGReferer_SD_Ecatalog] [HKINGESTYLE]
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