Discrete Semiconductor Products > Transistors - IGBTs - Single
Toshiba Semiconductor and Storage
IGBT 400V 1W 8-SOIC
Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max):
Current - Collector (Ic) (Max):
Current - Collector Pulsed (Icm):
Vce(on) (Max) @ Vge, Ic:
2.3V @ 4V, 200A
Power - Max:
Td (on/off) @ 25Â°C:
Reverse Recovery Time (trr):
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package:
Search For GT10G131 - GT10G131 Product Information :
GT10G131 Datasheet Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1 st. , 2010, NEC Electronics Corporation merged with, AT28C64E12TI IC EEPROM 64KBIT 120NS 28TSOP Series: - Format - Memory: EEPROMs - Parallel Memory Type: EEPROM Memory Size: 64K (8K x 8) Speed: 120ns Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40～C ~ 85～C Package / Case: 28-TSSOP (0.465, 11.80mm Width) Supplier Device Package: 28-TSOP ...
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Part Number Brand
Country / Region
Hongkong Shengshi Electronics Limited
Bonase Electronics (HK) Co., Limited
Tide Electronic Co.,Limited
OIC Electronics Hong Kong Company Limited
GT10G131(TE12L,Q) Toshiba Semiconductor and Storage
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