【IPB019N08N3 Transistors - FETs, MOSFETs - Single Infineon Technologies】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IPB019N08N3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 80V 180A TO263-7

Series:

OptiMOS

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80V

Current - Continuous Drain (Id) @ 25°C:

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Vgs(th) (Max) @ Id:

3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:

206nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

14200pF @ 40V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Rds On (Max) @ Id, Vgs:

1.9 mOhm @ 100A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7

Package / Case:

TO-263-7, D²Pak (6 Leads + Tab)

1 - 5 of 5 Record(s)
IPB019N08N3
 Part NumberBrandD/CQtyCompany

IPB019N08N3 G

Infineon Technologies15000MY Group (Asia) Limited    13

IPB019N08N3 G

Infineon Technologies31220HongKong Wanghua Technology Limited   4
Warranty

IPB019N08N3 G

INFINEON08+7790E-Core Electronics Co.   9
Warranty

IPB019N08N3

6745Chip 1 Exchange USA, Inc.    2

IPB019N080N3G

INFINEON2015+12400Bonase Electronics (HK) Co., Limited    13

Related Part Number

IPB020N04N | IPA90R800C3 | IPA90R800C3 | IPB009N03L | IPB010N06NATMA1 | IPB015N04L | IPB015N04N | IPB016N06L3G | IPB017N10N5ATMA1 | IPB019N06L3 | IPB020N04N
IPB019N08N3 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIZIA]
[HGReferer_OurService]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IPB019N08N3 Related Keywords in 2018 USA

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