| Part Number: | IPB049N06L3GATMA1 |
| Product Name: | IPB049N06L3GATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB049N06L3GATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 60V 80A TO263-3 |
| Series: | OptiMOS |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.2V @ 58µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 8400pF @ 30V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 115W (Tc) |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 80A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-2 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB049N06L3GATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0
IPB049N06L3GATMA1 Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IPB049N06L3GATMA1 Infineon Technologies
Infineon Technologies
1000
USD 0
IPB049N06L3GATMA1 Infineon Technologies 22+
Infineon Technologies
22+
476
USD 0
IPB049N06L3GATMA1 Infineon 2022
Infineon
2022
10000
USD 0
IPB049N06L3GATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0
IPB049N06L3GATMA1 Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IPB049N06L3GATMA1 Infineon Technologies
Infineon Technologies
1000
USD 0
IPB049N06L3GATMA1 Infineon Technologies 22+
Infineon Technologies
22+
476
USD 0
IPB049N06L3GATMA1 Infineon 2022
Infineon
2022
10000
USD 0
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