【IPB60R380C6 Transistors - FETs, MOSFETs - Single Infineon Technologies】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IPB60R380C6

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 600V 10.6A TO263

Series:

CoolMOS

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:

32nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

700pF @ 100V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

83W (Tc)

Rds On (Max) @ Id, Vgs:

380 mOhm @ 3.8A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-2

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB60R380C6 Description

IPB60R380C6, INF, TO-263-3, D?Pak (2 Leads + Tab), TO-263AB, MOSFET N-CH 600V 10.6A TO263, Discrete Semiconductor Products, FETs - Single
1 - 5 of 5 Record(s)
IPB60R380C6
 Part NumberBrandD/CQtyCompany

IPB60R380C6

Infineon Technologies23783HongKong Wanghua Technology Limited   4

IPB60R380C6

40483Hong Kong In Fortune Electronics Co., Limited    13

IPB60R380C6

115000L C Great Exploit Limited    11

IPB60R380C6

1000Lungke Electronics Technology Co., Limited    8

IPB60R380C6

Infineon Technologies2016+18000MY Group (Asia) Limited    13

Related Part Number

IPB60R385CP | IPB60R600C6 | IPB60R299CP | IPB60R385CP | IPB60R600C6 | IPB60R950C6 | IPB64N25S320ATMA1 | IPB65R045C7ATMA1 | IPB65R095C7ATMA1 | IPB65R110CFD | IPB65R110CFDAATMA1
IPB60R380C6 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTIP]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IPB60R380C6 Related Keywords in 2018 USA

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