【IPD127N06LGBTMA1 Transistors - FETs, MOSFETs - Single Infineon Technologies】【281182669】【TSH1205S】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Infineon Technologies


MOSFET N-CH 60V 50A TO-252





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:

69nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2300pF @ 30V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

136W (Tc)

Rds On (Max) @ Id, Vgs:

12.7 mOhm @ 50A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

1 - 11 of 11 Record(s)
IPD127N06LGBTMA1, 281182669, TSH1205S
 Part NumberBrandD/CQtyCompany


Infineon Technologies2016+1000MY Group (Asia) Limited    13


INFINEON5000Belt (HK) Electronics Co    11


INFINEON16+20000Yingxinyuan INT'L (Group) Limited    14


1000Lungke Electronics Technology Co., Limited    7


INFINEON10+27636HK Jiaweiyi Technology Limited    12


NEC50E-Core Electronics Co.   8

TSH 1205S

TRACO1055Top Electronics Co.,    12


TRACO2015+400Bonase Electronics (HK) Co., Limited    12

TSH 1205S

TRACO Power22300HongKong Wanghua Technology Limited   3


500Lungke Electronics Technology Co., Limited    7

TSH 1205S

TRACO201210000Aric Electronics Technology (HK) Co., Limited   12

Related Part Number

281182669 | TSH1205S | IPD107D | IPD108D | IPD110N12N | IPD115D | IPD115DP | IPD127N06L | IPD127N06LG | IPD127N06LGXT | IPD12CN10
IPD127N06LGBTMA1 Ref.:

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