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【IPD12CNE8N】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【INFINEON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IPD12CNE8N

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 85V 67A TO252-3

Series:

OptiMOS

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

85V

Current - Continuous Drain (Id) @ 25°C:

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:

64nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

4340pF @ 40V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Rds On (Max) @ Id, Vgs:

12.4 mOhm @ 67A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Search For IPD12CNE8N - IPD12CNE8N Product Information : 

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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IPD12CNE8N G

IPD12CNE8N G  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IPD12CNE8N

IPD12CNE8N  INFINEON 2015+ 6China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IPD12CNE8N G

IPD12CNE8N G  infineon 08+PG-TO252-3 2365China
AM SEMI-TECH CO,.LTD E-Catalog 4th Year Member

IPD12CNE8NG

IPD12CNE8NG  INFINEON 16+TO252-3 20000Taiwan
Yingxinyuan INT'L (Group) Limited E-Catalog 14th Year Member

IPD12CN10

IPD12CN10  infineon.ORI TO252 120
In-Stock
China
Kwong Shun Electronics (HK)Co. E-Catalog 13th Year Member

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