| Part Number: | IPD250N06N3GBTMA1 |
| Product Name: | IPD250N06N3GBTMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD250N06N3GBTMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 60V 28A TO252-3 |
| Series: | OptiMOS |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 11µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 36W (Tc) |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 28A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
Part NO. : IPD250N06N3GBTMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : IPD250N06N3GBTMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0
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