【IPD25N06S4L30ATMA1 Transistors - FETs, MOSFETs - Single Infineon Technologies】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

IPD25N06S4L30ATMA1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 60V 25A TO252-3

Series:

OptiMOS

Packaging:

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:

16.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1220pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

29W (Tc)

Rds On (Max) @ Id, Vgs:

30 mOhm @ 25A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-11

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

1 - 5 of 5 Record(s)
IPD25N06S4L30ATMA1
 Part NumberBrandD/CQtyCompany

IPD25N06S4L30ATMA1

Infineon Technologies1000MY Group (Asia) Limited    13

IPD25N06S4L-30

INFINEON2015+21000Bonase Electronics (HK) Co., Limited    12

IPD25N06S2-40

Infineon2016+52618Hong Kong In Fortune Electronics Co., Limited    13

IPD25N06S240ATMA1

Infineon Technologies1000MY Group (Asia) Limited    13

IPD25N06S4L-30

INFINEON1701+2918Zhengxinyuan Electronics (HK) Co., Limited   13

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IPD25N06S4L30ATMA1 Ref.:
[hkinbatch20180720]
[HGCacheDateZOIBIOIB]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

IPD25N06S4L30ATMA1 Related Keywords in 2018 USA

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