Part Number: | IPD60R650CEATMA1 |
Product Name: | IPD60R650CEATMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPD60R650CEATMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 600V TO-252-3 |
Series: | CoolMOS,CE |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 63W (Tc) |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.4A, 10V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
Part NO. : IPD60R650CEATMA1
Brand : INFINEON
Date Code : 22+
Qty : 55100
USD 0
Part NO. : IPD60R650CEATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : IPD60R650CEATMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPD60R650CEATMA1
Brand : INFINEON
Date Code : 22+
Qty : 55100
USD 0
Part NO. : IPD60R650CEATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : IPD60R650CEATMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0