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【IPD70N04S307】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【INFINEON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IPD70N04S307

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 40V 82A TO252-3

Series:

OptiMOS

Packaging:

Digi-Reel

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2700pF @ 25V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

79W (Tc)

Rds On (Max) @ Id, Vgs:

6 mOhm @ 70A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3

Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Search For IPD70N04S307 - IPD70N04S307 Product Information : 

Electronic Components Industry Services, Resistors, Inductors
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Part Number Part Number Brand D/C Desc Qty Country /
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IPD70N04S3-07

IPD70N04S3-07  Infineon Techno... 32700Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

IPD70N04S3-07

IPD70N04S3-07  1000Hong Kong
Lungke Electronics Technology Co., Limited E-Catalog 7th Year Member

IPD70N04S3-07

IPD70N04S3-07  INFINEON 2015+ 2626China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

IPD70N04S3-07

IPD70N04S3-07  Infineon 2016+TO-252 39300China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

IPD70N04S3-07

IPD70N04S3-07  INFINEON DEVICE 2500South Korea
Daejon Electronics E-Catalog 6th Year Member

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