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【IPP06CNE8N】【Transistors - FETs, MOSFETs - Single】【INFINEON TECHNOLOGIES】【INFINEON】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

IPP06CNE8N

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 85V 100A TO-220

Series:

OptiMOS

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

85V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:

138nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

9240pF @ 40V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

214W (Tc)

Rds On (Max) @ Id, Vgs:

6.5 mOhm @ 100A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO-220-3

Package / Case:

TO-220-3

Search For IPP06CNE8N - IPP06CNE8N Product Information : 

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1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

IPP06CNE8N G

IPP06CNE8N G  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IPP06CNE8N G

IPP06CNE8N G  infineon 05+PG-TO220-3 1145China
AM SEMI-TECH CO,.LTD E-Catalog 4th Year Member

IPP06CNE8N

IPP06CNE8N  17+ 28000China
CP MICRO-ELECTRON (HK) INDUSTRIAL CO., LIMITED E-Catalog 1st Year Member

IPP06CN10LGXKSA1

IPP06CN10LGXKSA1  Infineon Techno... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

IPP06CN10L

IPP06CN10L  Infineon 1040+TO-220 7900China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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