Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 700V 43.3A TO247
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs:
170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
5030pF @ 100V
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
80 mOhm @ 17.6A, 10V
-55Â°C ~ 150Â°C (TJ)
Supplier Device Package:
Package / Case:
Search For IPW65R080CFD - IPW65R080CFD Product Information :
IPW65R080CFD 2. 650V CoolMOS CFD2 Power Transistor. IPW65R080CFD . Rev. 2.4, 2011-09 -27. Final Data Sheet. TO-247 drain pin 2 gate pin 1 source pin 3. 1 Description. 800. 400. 300. 200. 100. 0. 600. 800. T=25 C; lf=20A; Rg, d=5.6 ; Ugs=13V. U [V]. 400. 200. 0 t [ s]. SPW47N60CFD. Comp2 43A. IPW65R080CFD Mar 14, 2013 (IFX board) using the new CoolMOSTM IPW65R080CFD . The main features and benefits of this new. Superjunction MOSFET are documented IPW65R080CFD . Comp2 600 V. Less Voltage Overshoot. Limited voltage overshoot by CFD2 during hard commutation of conducted body diode. Improved telecom servers. All the measurements and comparisons are done with the IPW65R080CFD and. SPW47N60CFD in the full bridge (MOSFET A, B, C, D). ...
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