【IRF1010E IR】【BCR158】【D55342M07B10K0P】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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IRF1010E Description

Datasheet IRF1010E . HEXFET Power MOSFET . 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Jun 29, 2004 www. irf .com. 1. VDSS = 60V. RDS(on) = 12m . ID = 84A . S. D. G. Advanced HEXFET Power MOSFETs from International. Rectifier utilize 9/8/03 www. irf .com. 1. AUTOMOTIVE MOSFET . PD - 94652A. HEXFET Power MOSFET . VDSS = 55V. RDS(on) = 7.5m . ID = 75A. Specifically designed for May 13, 1998 HEXFET Power MOSFET . PD - 91437B. Parameter. Max. MOSFETs are well known for, provides the designer .. http://www. irf .com/package/. www. irf .com. TYPICAL APPLICATION. DESCRIPTION .. 3) Select a package from the datasheet with lower JA than the one calculated in the previous step.
1 - 15 of 15 Record(s)
Hot Offer
 Part NumberBrandD/CQtyCompany




100000SeeMe Technology Co., LTD   1

IRF1010E, BCR158, D55342M07B10K0P
 Part NumberBrandD/CQtyCompany


IR16+9000Riking Technology (HK) Co., Limited    8


IR324Hongkong Intercell Electronics Co.,Limited    7


IR13+13800A & C Int'l Electronics Co.    10

BCR 158 B6327

Infineon Technologies15+15000Dedicate Electronics (HK) Limited    7



BCR 158 B6327


BCR158 E6327

INFINEON9000C & I Semiconductors Co., Limited    8


INFINEON09+42000Gaokeda Technology (HK) Limited    10

D55342K07B100JM? 2014

1000HK Hongkai Electronics Limited    11


VISHAY1238HK Jiaweiyi Technology Limited    12


VISHAY2015+40000Bonase Electronics (HK) Co., Limited    12


VISHAY17+100000Shenzhen Allchips Information & Technology Co., Ltd    2


15+1000Beijing Circle World(HuanQiuChangTong) Electronics Co., Ltd    1

Related Part Number

BCR158 | D55342M07B10K0P | IRF100B202 | IRF1010 | IRF1010E | IRF1010EPBF | IRF1010N | IRF1010NPBF | IRF1010NSTRL | IRF1010NSTRLPBF | IRF1014
IRF1010E Ref.:

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