IRF1010E Datasheet IRF1010E . HEXFET Power MOSFET . 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Jun 29, 2004 www. irf .com. 1. VDSS = 60V. RDS(on) = 12m . ID = 84A . S. D. G. Advanced HEXFET Power MOSFETs from International. Rectifier utilize 9/8/03 www. irf .com. 1. AUTOMOTIVE MOSFET . PD - 94652A. HEXFET Power MOSFET . VDSS = 55V. RDS(on) = 7.5m . ID = 75A. Specifically designed for May 13, 1998 HEXFET Power MOSFET . PD - 91437B. Parameter. Max. MOSFETs are well known for, provides the designer .. http://www. irf .com/package/. www. irf .com. TYPICAL APPLICATION. DESCRIPTION .. 3) Select a package from the datasheet with lower JA than the one calculated in the previous step.
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