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【IRF1010E IR】【BCR158】【D55342M07B10K0P】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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Hong Kong In Fortune Electronics Co., Limited, HK Niuhuasi Technology Limited ...
Product Information1 - 15 of 15 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
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Company

IRF1010E

IRF1010E 35587China
Hong Kong In Fortune Electronics Co., Limited  12

IRF1010E

IRF1010E IR9000China
HK Niuhuasi Technology Limited  7

IRF1010E

IRF1010E IR14+50China
CHIPMALL ELECTRONICS LIMITED  2

IRF1010E

IRF1010E IR16+9000China
Riking Technology (HK) Co., Limited  8

IRF1010E

IRF1010E IR5000Hong Kong
United Sources Industrial Enterprises 16

BCR158

BCR158 31420China
Hong Kong In Fortune Electronics Co., Limited  12

BCR158

BCR158 INFINEON2015+7900Hong Kong
Hongkong Rixin International Trading Company  1

BCR158

BCR158 INFINEON14+520China
CHIPMALL ELECTRONICS LIMITED  2

BCR158

BCR158 INFINEON14000China
Icwindows Electronics HK Co.,Limited 11

BCR158

BCR158 INFINEON15+1420China
Taiwan Anprosperous Technology Co.,Limited  11

D55342K07B100JM? 2014

D55342K07B100JM? 2014 1000China
HK Hongkai Electronics Limited  11

D55342E07B10E0R

D55342E07B10E0R VISHAY1238China
HK Jiaweiyi Technology Limited  12

D55342K07B10J0M

D55342K07B10J0M VISHAY2015+40000China
Bonase Electronics (HK) Co., Limited  11

D55342K07B11G0RS6

D55342K07B11G0RS6 VISHAY17+100000China
Shenzhen Allchips Information & Technology Co., Ltd  1

D55342K07B15J0M

D55342K07B15J0M 15+1000China
Beijing Circle World(HuanQiuChangTong) Electronics Co., Ltd  1

Buy: IRF1010E, BCR158, D55342M07B10K0P
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BCR158 | D55342M07B10K0P | IRF024NPBF | IRF03EB101K | IRF044 | IRF064 | IRF064N | IRF1010 | IRF1010N | IRF1010NPBF | IRF1010NSTRL
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IRF1010E Datasheet IRF1010E . HEXFET Power MOSFET . 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.75. R CS. Case-to-Sink, Flat, Greased Surface. Jun 29, 2004 www. irf .com. 1. VDSS = 60V. RDS(on) = 12m . ID = 84A . S. D. G. Advanced HEXFET Power MOSFETs from International. Rectifier utilize 9/8/03 www. irf .com. 1. AUTOMOTIVE MOSFET . PD - 94652A. HEXFET Power MOSFET . VDSS = 55V. RDS(on) = 7.5m . ID = 75A. Specifically designed for May 13, 1998 HEXFET Power MOSFET . PD - 91437B. Parameter. Max. MOSFETs are well known for, provides the designer .. http://www. irf .com/package/. www. irf .com. TYPICAL APPLICATION. DESCRIPTION .. 3) Select a package from the datasheet with lower JA than the one calculated in the previous step.

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