【IRF250N IR】【BCR50AM】【QMK432BJ224KMT】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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IRF250N Description

Aug 18, 2010 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 30. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 22, 2001 IRF250 . 200V 0.085 30A. For footnotes refer to the last page. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6766. HEXFET. ABSTRACT. The DRV3201 boost converter is used to drive the external power MOSFETs. This type of converter allows the DRV3201 to continue full operation Dec 17, 2015 This application note explains the most common related issues for the identification of suitable gate resistors for power electronic devices.
1 - 13 of 13 Record(s)
IRF250N, BCR50AM, QMK432BJ224KMT
 Part NumberBrandD/CQtyCompany

IRF250N

IR0513+100CHIPMALL ELECTRONICS LIMITED    3

IRF250N

IR12+10000SHIJIa BAIKE (HK) ELECTRONICS LIMITED   2

IRF2500TOSE

S-CERA6900Hong Kong In Fortune Electronics Co., Limited    12

IRF250

ir94139ComS.I.T. Inc.   1

IRF250

isc/iscsemi2017+3000Inchange Semiconductor Company Limited   2

BCR50AM
 

MIT400HY(HK) Ic Limited    8

BCR50AM

201071Digchip Technology Co.,Limited    3

BCR50A

MITSUBISHI2000Icwindows Electronics HK Co.,Limited   11

QMK432BJ224KM-T

TaiyoYuden15700SUNTOP SEMICONDUCTOR CO., LIMITED    3

QMK432BJ224KM-T

TAIYO YUDEN2016+38000MY Group (Asia) Limited    13

QMK432BJ224KM-T

TAYO YUDEN2015+360000Bonase Electronics (HK) Co., Limited    12

QMK432BJ224KM-T

TAIYO YUDEN16407HongKong Wanghua Technology Limited   3

QMK432BJ224KM-T

TAIYO08+120000C & I Semiconductors Co., Limited   8

Related Part Number

BCR50AM | QMK432BJ224KMT | IRF2507 | IRF250M | IRF250NPBF | IRF250R | IRF251 | IRF2510 | IRF2520D | IRF2525 | IRF2530
IRF250N Ref.:
[hkinbatch20171020]
[HGCacheDateZOIBOIIB]
[HGReferer_TRC]
[HKIN20171020GESTYLE]

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