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【IRF250N IR】【BCR50AM】【QMK432BJ224KMT】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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IRF250N Aug 18, 2010 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 30. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 22, 2001 IRF250 . 200V 0.085 30A. For footnotes refer to the last page. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6766. HEXFET. Jan 22, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 75 . mJ. IAR. Avalanche Current . 14. A. EAR. Repetitive Dec 17, 2015 This application note explains the most common related issues for the identification of suitable gate resistors for power electronic devices. ...
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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

IRF250N

IRF250N IR12+10000China
SHIJIa BAIKE (HK) ELECTRONICS LIMITED 2

IRF250

IRF250 isc,iscsemi2018+3000China
Inchange Semiconductor Company Limited 2

IRF2500TOSE

IRF2500TOSE S-CERA6900China
Hong Kong In Fortune Electronics Co., Limited  13
STRC

IRF250

IRF250 IR550China
Top Electronics Co.,  13

IRF250

IRF250 99+21China
Yu Hong Technologies Limited  2

BCR50AM

BCR50AM MIT400China
HY(HK) Ic Limited  8

BCR50AM

BCR50AM 650China
HK Asian TaiXin Technology Co.,LTD 1

QMK432BJ224KM-T

QMK432BJ224KM-T TaiyoYuden15700Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED  3

QMK432BJ224KM-T

QMK432BJ224KM-T TAIYO10+350000China
Nortion Technology (HK) Co.,Limited  8

QMK432BJ224KM-T

QMK432BJ224KM-T TAYO YUDEN2015+360000China
Bonase Electronics (HK) Co., Limited  12
STRC

QMK432BJ224KM-T

QMK432BJ224KM-T TAIYO YUDEN201281188China
MY Group (Asia) Limited  13

QMK432BJ224KM-T

QMK432BJ224KM-T TAIYO YUDEN99000Hong Kong
MASSTOCK ELECTRONICS LIMITED 1

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BCR50AM | QMK432BJ224KMT | IRF2507 | IRF250M | IRF250NPBF | IRF250R | IRF251 | IRF2510 | IRF2520D | IRF2525 | IRF2530
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