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【IRF250N IR】【BCR50AM】【QMK432BJ224KMT】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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IRF250N Aug 18, 2010 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 30. ID @ TC = 100 C. Continuous Drain Current, VGS @ 10V. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Jan 22, 2001 IRF250 . 200V 0.085 30A. For footnotes refer to the last page. REPETITIVE AVALANCHE AND dv/dt RATED. JANTX2N6766. HEXFET. Jan 22, 2001 VGS. Gate-to-Source Voltage. 20. V. EAS. Single Pulse Avalanche Energy . 75 . mJ. IAR. Avalanche Current . 14. A. EAR. Repetitive Dec 17, 2015 This application note explains the most common related issues for the identification of suitable gate resistors for power electronic devices. ...
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Part NumberPart Number BrandD/CQtyCountry /


IRF250N IR12+10000China


IRF250 isc,iscsemi2018+3000China
Inchange Semiconductor Company Limited 2


IRF2500TOSE S-CERA6900China
Hong Kong In Fortune Electronics Co., Limited  13


IRF250 IR550China
Top Electronics Co.,  13


IRF250 99+21China
Yu Hong Technologies Limited  2


BCR50AM MIT400China
HY(HK) Ic Limited  8


BCR50AM 650China
HK Asian TaiXin Technology Co.,LTD 1


QMK432BJ224KM-T TaiyoYuden15700Hong Kong


QMK432BJ224KM-T TAIYO10+350000China
Nortion Technology (HK) Co.,Limited  8


QMK432BJ224KM-T TAYO YUDEN2015+360000China
Bonase Electronics (HK) Co., Limited  12


QMK432BJ224KM-T TAIYO YUDEN201281188China
MY Group (Asia) Limited  13


QMK432BJ224KM-T TAIYO YUDEN99000Hong Kong

Buy: IRF250N, BCR50AM, QMK432BJ224KMT
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IRF250N related keywords in 2018 United States

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